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| HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 200 V 200 V 200 V ID25 RDS(on) 42 A 60mW 50 A 45mW 58 A 40mW trr 200 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C 42N20 50N20 58N20 42N20 50N20 58N20 42N20 50N20 58N20 Maximum Ratings 200 200 20 30 42 50 58 168 200 232 42 50 58 30 5 300 -55 ... +150 150 -55 ... +150 V V V V G TO-268 (D3) Case Style (TAB) A A A A A A A A A mJ V/ns W C C C C S (TAB) TO-204 AE (IXFM) S D G = Gate, S = Source, D = Drain, TAB = Drain G EAR dv/dt PD TJ TJM Tstg TL Md Weight TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g Features * International standard packages * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance - easy to drive and to protect * Fast intrinsic Rectifier Applications * DC-DC converters * Synchronous rectification * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC motor control * Temperature and lighting controls * Low voltage relays Advantages * Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) * High power surface mountable package * High power density 91522H (2/98) Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 200 2 4 100 TJ = 25C TJ = 125C 200 1 V V nA mA mA VDSS VGS(th) IGSS IDSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved 1-4 IXFH/IXFM42N20 IXFH/IXFM50N20 Symbol Test Conditions (TJ = 25C, unless otherwise specified) RDS(on) 42N20 50N20 58N20 Pulse test, t 300 ms, duty cycle d 2 % VDS = 10 V; ID = 0.5 ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz 20 32 4400 800 285 18 15 72 16 190 35 95 0.25 25 20 90 25 220 50 110 VGS = 10 V, ID = 0.5 ID25 Min. IXFH/IXFM58N20 IXFT50N20 IXFT58N20 TO-247 AD (IXFH) Outline Characteristic Values Typ. Max. 0.060 W 0.045 W 0.040 W S pF pF pF ns ns ns ns nC nC nC gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 R G = 1 W (External) Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 (TO-247 and TO-204 Case styles) 0.42 K/W K/W Source-Drain Diode Symbol IS Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 42N20 50N20 58N20 42N20 50N20 58N20 42 50 58 168 200 232 1.5 200 300 1.5 2.6 19 23 A A A A A A V ns ns mC mC A A 1.5 2.49 TO-204 AE (IXFM) Outline ISM Repetitive; pulse width limited by TJM VSD t rr QRM IRM IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = 25A, -di/dt = 100 A/ms, VR = 100 V TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C Dim. A B C D E F G H J K Q R TO-268AA (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Millimeter Min. Max. 38.61 39.12 - 22.22 6.40 11.40 1.45 1.60 1.52 3.43 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 26.66 Inches Min. Max. 1.520 1.540 - 0.875 0.252 0.449 0.057 0.063 0.060 0.135 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.050 Min. Recommended Footprint (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFH/IXFM42N20 IXFH/IXFM50N20 Fig. 1 Output Characteristics 100 90 80 70 60 50 40 30 20 10 0 5V IXFH/IXFM58N20 IXFT50N20 IXFT58N20 Fig. 2 Input Admittance 100 90 80 70 60 50 40 30 20 10 0 TJ = 25C VGS = 10V 9V 8V 7V ID - Amperes ID - Amperes 6V TJ = 25C 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 VDS - Volts VGS - Volts Fig. 3 RDS(on) vs. Drain Current 2.6 2.4 Fig. 4 Temperature Dependence of Drain to Source Resistance 2.50 2.25 RDS(on) - Normalized RDS(on) - Normalized 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 25 50 75 100 125 150 175 VGS = 10V VGS = 15V 2.00 1.75 1.50 1.25 1.00 0.75 0.50 -50 -25 0 25 50 75 100 125 150 ID = 25A ID - Amperes TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature 80 70 60 58N20 50N20 42N20 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 VGS(th) 1.1 BVDSS BV/VG(th) - Normalized ID - Amperes 1.0 0.9 0.8 0.7 0.6 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TC - Degrees C TJ - Degrees C (c) 2000 IXYS All rights reserved 3-4 IXFH/IXFM42N20 IXFH/IXFM50N20 Fig.7 Gate Charge Characteristic Curve IXFH/IXFM58N20 IXFT50N20 IXFT58N20 Fig.8 Forward Bias Safe Operating Area 14 VDS = 100V 12 I = 10mA G ID = 50A 100 Limited by R DS(on) 10s ID - Amperes VGE - Volts 10 8 6 4 2 0 0 25 50 75 100 125 150 175 200 100s 10 1ms 10ms 100ms 1 1 10 100 200 Gate Charge - nCoulombs VDS - Volts Fig.9 Capacitance Curves 4500 4000 50 40 Fig.10 Source Current vs. Source to Drain Voltage Ciss Capacitance - pF 3500 ID - Amperes 3000 2500 2000 1500 1000 500 0 0 5 f = 1MHz VDS = 25V 30 20 10 0 0.4 TJ = 125C Coss Crss TJ = 25C 10 15 20 25 0.6 0.8 1.0 1.2 1.4 VDS - Volts VSD - Volts Fig.11 Transient Thermal Impedance Thermal Response - K/W D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds (c) 2000 IXYS All rights reserved 4-4 |
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